BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. Normalised avalanche energy rating. Typical reverse diode current.

Refer to mounting instructions for TO envelopes. Avalanche energy test circuit.

No liability will be accepted by the publisher for any consequence of its use. TOAB; pin 2 connected to mounting base.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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Normalised avalanche energy rating. Stress above one or more of the limiting values may cause permanent damage to the device. Preliminary specification This data sheet contains preliminary data; supplementary datasbeet may be published later.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

BUK455600C DATASHEET

Stress above one or more of the limiting values may cause permanent damage to the device. Product specification This data sheet contains final product specifications.

This data sheet contains final product specifications. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. C Philips Electronics N.

Transistors

August 6 Rev 1. TOAB; pin 2 connected to mounting base. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

UNIT – – 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Application information Where application information is given, it is advisory and does not form part of the specification. Typical turn-on gate-charge characteristics.

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Product Categories | MOSFET | New Jersey Semiconductor

Typical reverse diode current. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. August 7 Rev 1. Normalised continuous drain current.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Application information Where application information is given, it is advisory and does not form part of the specification. Typical capacitances, Ciss, Coss, Crss. Typical capacitances, Ciss, Dataaheet, Crss.

Exposure to limiting values for extended periods may affect device reliability.

Normalised continuous drain current. Exposure to limiting values for extended periods may affect device reliability. This data sheet contains target or goal specifications for product development. No liability will be accepted by the publisher for any consequence of its use.